| PART |
Description |
Maker |
| IRHM93130 IRHM9130 IRHM9130-15 |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
RADIATION HARDENED POWER MOSFET / 100V, P-CHANNEL
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
|
IRF[International Rectifier]
|
| 5962F9671501VCC 5962F9671501VXC ACTS125MS ACTS125H |
Radiation Hardened Quad Buffer/ Three-State
Radiation Hardened Quad Buffer Three-State
From old datasheet system
Radiation Hardened Quad Buffer, Three-State 辐射加固四缓冲，三
ECONOLINE: RD & RC - Dual Output from a Single Input Rail- 1kVDC & 2kVDC Isolation- Power Sharing on Output- Custom Solutions Available- UL94V-0 Package Material- Efficiency to 86% 辐射加固四缓冲，三
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FS |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| JANSR2N7281 FN4294 |
Radiation Hardened/ N-Channel Power MOSFET
Radiation Hardened, N-Channel Power MOSFET
Radiation Hardened N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC916 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| 5962R9571401QXC 5962R9571401QRC FN3040 5962R957140 |
Radiation Hardened 8-Bit Bus Transceiver
From old datasheet system
Radiation Hardened 8-Bit Bus Transceiver OCTAL LINE TRANSCEIVER, CDIP20
Radiation Hardened 8-Bit Bus Transceiver CMOS SERIES, 8-BIT TRANSCEIVER, TRUE OUTPUT, CDFP20
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPL230D1 FSPL230F FSPL230F3 FSPL230F4 FSPL230R4 F |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| HS-82C54RH HS1-82C54RH HS1-82C54RH-8 HS1-82C54RH-Q |
From old datasheet system
Radiation Hardened CMOS Programmable Interval Timer
Radiation Hardened CMOS RProgrammable Interval TimerS
|
INTERSIL[Intersil Corporation]
|
| XQVR1000-4CG560M XQVR1000-4CG560V XQVR600-4CB228M |
2.5V Radiation Hardened FPGAs 2.5V的抗辐射FPGA
QPro Virtex 2.5V Radiation Hardened FPGAs
|
Panduit, Corp.
Xilinx, Inc.
|
| IRHF7110 IRHF8110 IRHF3110 IRHF4110 IRHF4110NBSP |
RADIATION HARDENED POWER MOSFET THRU-HOLE 抗辐射功率MOSFET的通孔
From old datasheet system
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
|
IRF[International Rectifier]
|
| 2N7632UC IRHLUC7630Z4 IRHLUC7670Z4 IRHLUC7670Z4-15 |
RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
Simple Drive Requirements
|
International Rectifier
|
